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Interference-enhanced deep-ultraviolet Raman signals of hexagonal boron nitride flake and its underlying silicon substrate

2021-08-26

 

Author(s): Liu, T (Liu, Tao); Lin, ML (Lin, Miao-Ling); Leng, YC (Leng, Yu-Chen); Cong, X (Cong, Xin); Zhang, X (Zhang, Xin); Tan, PH (Tan, Ping-Heng)

Source: JOURNAL OF RAMAN SPECTROSCOPY DOI: 10.1002/jrs.6228 Early Access Date: AUG 2021

Abstract: We take hexagonal boron nitride (hBN) flakes exfoliated on SiO 2/Si substrates as a prototype, to demonstrate how to enhance the Raman signals both from ultra-thin layered materials and the underlying opaque substrate excited by deep ultraviolet (DUV) laser. We found that the interference effect in the hBN/SiO 2/Si multilayered structure can largely enhance Raman intensity of hBN flake and the underlying Si substrate under 266-nm excitation. This enhancement effect is more significant than that under visible excitation. With increasing the thickness of SiO 2 layer in the substrate, the corresponding hBN and Si Raman intensity can vary by up to similar to 4 and similar to 2 orders of magnitude under 266-nm excitation, respectively. This method can be applicable to enhance Raman signal from other two-dimensional materials under DUV excitation by tuning the thickness of SiO 2 layer in the SiO 2/Si substrate.

Accession Number: WOS:000684938700001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

TAN, Ping-Heng         D-1137-2009         0000-0001-6575-1516

ISSN: 0377-0486

eISSN: 1097-4555

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